HAT2037T Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2037T
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.25
Pulse Test
0.20
0.15
0.10
ID=5A
0.05
2A
1A
0
2
4
6
8
10
Gate to Source Voltage V _GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.2
Pulse Test
0.1
0.05
2.5 V
0.02
V_GS = 4 V
0.01
0.005
0.002
0.2
0.5 1 2
5 10 20
Drain Current I _D (A)
Static Drain to Source on State Resistance
vs. Temperature
50
I_D= 5 A 2 A 1 A
40
30 ^{VGS = 2.5 V}
5, 2, 1 A
20
4V
10
Pulse Test
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
Tc = –25 °C
20
10
75 °C
5
25 °C
2
1
0.5
0.2
V _DS = 10 V
Pulse Test
0.5 1 2
5 10 20
Drain Current I _D (A)
4