HAT2037T Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

Main Characteristics
Power vs. Temperature Derating
2.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
1.5
1.0
0.5
0
50
100
150
200
Ambient Temperature Ta (°C)
HAT2037T
Maximum Safe Operation Area
100
10 µs
30
100 µs
10
PW ^{1 ms}
3
1
0.3
0.1
Otlihmpisietearadretibao^D_yn^C_isRi^On^{pDeSra(tioonn)(PW=}_<¹₁⁰N_0o^m_ste)^s₄
0.03 _{Ta = 25 °C}
0.01 ^{1 shot Pulse}
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V DS (V)
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
50
10V
5V
3V
40
4V
30
2.5 V
20
V_GS = 1.5 V
10
Pulse Test
0
2
4
6
8
10
Drain to Source Voltage V _DS (V)
Typical Transfer Characteristics
50
–25°C
40
25°C
Tc = 75°C
30
20
10
V _DS = 10 V
Pulse Test
0
1
2
3
4
5
Gate to Source Voltage V GS (V)
3