HAT2037T Datasheet, PDF (2/9 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2037T
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
V_DSS
28
Gate to source voltage
V_GSS
±12
Drain current
I_D
5.5
Drain peak current
I Note1
D(pulse)
44
Body-drain diode reverse drain current I_DR
5.5
Channel dissipation
Pch ^Note2
1.3
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS 28
Gate to source breakdown voltage V_(BR)GSS ±12
Gate to source leak current
I _GSS
—
Zero gate voltege drain current
I _DSS
—
Gate to source cutoff voltage
V_GS(off)
0.4
Static drain to source on state
R_DS(on)
—
resistance
R_DS(on)
—
Forward transfer admittance
|y_fs|
9
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage V_DF
—
Body–drain diode reverse
recovery time
t _rr
—
Note: 3. Pulse test
Typ Max Unit
—
—
V
—
—
V
—
±10 µA
—
1
µA
—
1.4 V
0.021 0.028 Ω
0.027 0.038 Ω
14
—
S
780 —
pF
470 —
pF
190 —
pF
20
—
ns
130 —
ns
155 —
ns
160 —
ns
0.81 1.06 V
55
—
ns
Test Conditions
I_D = 10mA, V_GS = 0
I_G = ±100µA, V_DS = 0
V_GS = ±10V, V_DS = 0
V_DS = 28 V, V_GS = 0
V_DS = 10V, I _D = 1mA
I_D = 3A, V_GS = 4V ^Note3
I_D = 3A, V_GS = 2.5V ^Note3
I_D = 3A, V_DS = 10V ^Note3
V_DS = 10V
V_GS = 0
f = 1MHz
V_GS = 4V, I_D = 3A
V_DD ≈ 10V
IF =5.5A, V_GS = 0 ^Note3
IF = 5.5A, V_GS = 0
diF/ dt =20A/µs
2