HAT2025R Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2025R
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.20
Pulse Test
0.16
0.12
ID=5A
0.08
2A
0.04
1A
0
2
4
6
8
10
Gate to Source Voltage V _GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
500
Pulse Test
200
100
50
20
10
5
0.2
4V
4.5 V
V_GS = 10 V
0.5 1 2
5 10 20
Drain Current I _D (A)
Static Drain to Source on State Resistance
vs. Temperature
100
Pulse Test
80
60
I _D= 5 A ^{2, 1 A}
40 ^VGS ^{= 4 V}
2, 1 A
5A
4.5 V
20
5, 2, 1 A
10 V
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
20
Tc = –25 °C
10
5
75 °C
2
25 °C
1
0.5
0.2
V _DS = 10 V
Pulse Test
0.5 1 2
5 10 20
Drain Current I _D (A)
4