HAT2025R Datasheet, PDF (2/9 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2025R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
V_DSS
V_GSS
I_D
I ^Note1
D(pulse)
I _DR
Pch ^Note2
30
± 20
8
64
8
2.5
Channel temperature
Tch
150
Storage temperature
Tstg
– 55 to + 150
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS
Gate to source breakdown voltage V_(BR)GSS
Gate to source leak current
I _GSS
Zero gate voltege drain current
I _DSS
Gate to source cutoff voltage
V_GS(off)
Static drain to source on state
R_DS(on)
resistance
R_DS(on)
Forward transfer admittance
|y_fs|
Input capacitance
Ciss
30
± 20
—
—
1.3
—
—
7
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage V_DF
—
Body–drain diode reverse
recovery time
t _rr
—
Note: 3. Pulse test
Typ Max Unit
—
—
V
—
—
V
—
± 10 µA
—
10
µA
—
2.4 V
0.019 0.026 Ω
0.030 0.050 Ω
11
—
S
660 —
pF
510 —
pF
130 —
pF
30
—
ns
265 —
ns
35
—
ns
58
—
ns
0.8 1.3 V
55
—
ns
Test Conditions
I_D = 10 mA, V_GS = 0
I_G = ± 100 µA, V_DS = 0
V_GS = ± 16 V, V_DS = 0
V_DS = 30 V, V_GS = 0
V_DS = 10 V, I _D = 1 mA
I_D = 4 A, V_GS = 10 V ^Note3
I_D = 4 A, V_GS = 4.5 V ^Note3
I_D = 4 A, V_DS = 10 V ^Note3
V_DS = 10 V
V_GS = 0
f = 1MHz
V_GS = 4 V, I_D = 4 A
V_DD ≅ 10 V
IF = 8 A, V_GS = 0 ^Note3
IF = 8 A, V_GS = 0
diF/ dt = 20 A/µs
2