HAT2025R Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2025R
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
• High speed switching
• Low on-resistance
• Capable of 4 V gate drive
• Low drive current
• High density mounting
Outline
ADE-208-518C (Z)
4th. Edition
February 1999
SOP–8
8 ^{7 65}
56 7 8
DD D D
1 ²³⁴
4
G
SSS
12 3
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain