3SK186 Datasheet, PDF (4/6 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK186
Forward Transfer Admittance vs.
Gate 1 to Source Voltage
20
V_DS = 6 V
3
2.5
16
2.0
12
1.5
8
1.0
4
V_G2S = 0.5 V
0
–0.4 0
0.4 0.8 1.2 1.6
Gate 1 to Source Voltage V_G1S (V)
Power Gain vs. Drain Current
20
16
12
8
V_DS = 4 V
4
V_G2S = 3 V
f = 900 MHz
0
2
4
6
8 10
Drain Current I_D (mA)
Noise Figure vs. Drain Current
10
V_DS = 4 V
8
V_G2S = 3 V
f = 900 MHz
6
4
2
0
2
4
6
8 10
Drain Current I_D (mA)
4