3SK186 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK186
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V_DS
V_G1S
V_G2S
I_D
Pch
Tch
Tstg
Ratings
Unit
12
V
±10
V
±10
V
35
mA
150
mW
125
°C
–55 to +125
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Drain to source breakdown
V_(BR)DSX
12
—
voltage
Gate 1 to source breakdown V_(BR)G1SS ±10
—
voltage
Gate 2 to source breakdown V_{(BR) G2SS} ±10
—
voltage
Gate 1 cutoff current
I _G1SS
—
—
Gate 2 cutoff current
I _G2SS
—
—
Gate 1 to source cutoff voltage V_G1S(off) +0.5 —
Gate 2 to source cutoff voltage V_G2S(off) +0.5 —
Drain current
I _DSS
Forward transfer admittance |y_fs|
0
—
15
—
Input capacitance
Ciss
—
1.7
Max Unit
—
V
—
V
—
V
±100 nA
±100 nA
–0.8 V
–0.8 V
4
mA
—
mS
2.2 pF
Output capacitance
Coss —
Reverse transfer capacitance Crss
—
Power gain
PG
16
1.0
1.4
pF
0.017 0.03 pF
19
—
dB
Noise figure
Note: Marking is “FI–”.
NF
—
3.0
4.5
dB
Test conditions
V_G1S = V_G2S = –5 V,
I_D = 200 µA
I_G1 = ±10 µA, V_G2S = V_DS = 0
I_G2 = ±10 µA, V_G1S = V_DS = 0
V_G1S = ±8 V, V_G2S = V_DS = 0
V_G2S = ±8 V, V_G1S = V_DS = 0
V_DS = 6 V, V_G2S = 3V,
I_D = 100 µA
V_DS = 6 V, V_G1S = 3V,
I_D = 100 µA
V_DS = 6 V, V_G2S = 3V, V_G1S = 0
V_DS = 6 V, V_G2S = 3V,
I_D = 10 mA, f = 1 kHz
V_DS = 6 V, V_G2S = 3V,
I_D = 10 mA, f = 1 MHz
V_DS = 4 V, V_G2S = 3V,
I_D = 10 mA, f = 900 MHz
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