3SK186 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

Maximum Channel Power
Dissipation Curve
300
200
100
0
50
100
150
Ambient Temperature Ta (°C)
Drain Current vs. Gate 1
to Source Voltage
20
3
2.5
16 ^{VDS = 4 V}
2 1.5
12
1.0
8
V_G2S = 0.5 V
4
0
–0.8 0
0.8 1.6 2.4 3.2
Gate 1 to Source Voltage V_G1S (V)
3SK186
Typical Output Characteristics
20 _{1.6 1.4}
1.2
16
1.0
V_G2S = 3 V
12
0.8
8
0.6
4
0.4
0.2
V_G1S = 0 V
0
2
4
6
8 10
Drain to Source Voltage V_DS (V)
Drain Current vs. Gate 2
to Source Voltage
20
1.75 1.5 1.25
16 ^{VDS = 4 V}
1.0
12
0.75
8
0.5
4
0.25
V_G1S = 0
0
0.8 1.6 2.4 3.2 4.0
Gate 2 to Source Voltage V_G2S (V)
3