2SK1336 Datasheet, PDF (4/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1336
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
1.0
Pulse Test
0.8
0.5 A
0.6
0.4
0.2 A
0.2
I_D = 0.1A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
5
Pulse Test
4
I_D = 0.5 A ^{0.2 A}
3
V_GS = 4 V
2
0.1 A
0.5 A
0.2 A
1
10 V
0.1 A
0
–40 0
40
80 120 160
Case Temperature T_C (°C)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
5
2
V_GS = 4 V
1
10 V
0.5
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)
Forward Transfer Admittance
vs. Drain Current
5
V_DS = 10 V
2 ^{Pulse Test}
1
25°C
0.5
–25°C
0.2
T_C = 75°C
0.1
0.05
0.02 0.05 0.1 0.2 0.5 1 2
Drain Current I_D (A)
4