2SK1336 Datasheet, PDF (3/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Power vs. Temperature Derating
600
400
200
0
50
100
150
Ambient Temperarure Ta (°C)
Typical Output Characteristics
1.0 _{10 V 6 V}
Pulse Test
0.8
4V
3.5 V
0.6
3V
0.4
2.5 V
0.2
V_GS = 2 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
2SK1336
Maximum Safe Operation Area
5
3
1
0.3
OpiserlaimtioitnedinbtyhiRs
area
DS ^(on)
0.1
10 _µs
1 _ms
0.03
Ta = 25°C
0.01
0.005
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
1.0
V_DS = 10 V
Pulse Test
0.8
0.6
0.4
0.2
25°C
T_C = 75°C
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
3