2SK1336 Datasheet, PDF (2/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1336
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
Symbol
V_DSS
V_GSS
I_D
I *¹
D(pulse)
I _DR
Pch
Tch
Tstg
Ratings
Unit
60
V
±20
V
0.3
A
1.2
A
0.3
A
400
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V_(BR)DSS 60
Gate to source breakdown
voltage
V_(BR)GSS ±20
Gate to source leak current
I _GSS
—
Zero gate voltage drain current I_DSS
—
Gate to source cutoff voltage V_GS(off) 1.0
Static drain to source on state R_DS(on) —
resistance
—
Forward transfer admittance |yfs|
0.22
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body to drain diode forward V_DF
—
voltage
Body to drain diode reverse t_rr
—
recovery time
Note: 1. Pulse test
Typ
—
—
—
—
—
1.3
1.8
0.35
33
17
5
2
4
18
16
0.9
45
Max
—
—
±10
50
2.0
1.7
2.5
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±16 V, V_DS = 0
V_DS = 50 V, V_GS = 0
I_D = 1 mA, V_DS = 10 V
I_D = 0.2 A, V_GS = 10 V *¹
I_D = 0.2 A, V_GS = 4 V *¹
I_D = 0.2 A, V_DS = 10 V *¹
V_DS = 10 V, V_GS = 0,
f = 1 MHz
I_D = 0.2 A, V_GS = 10 V,
R_L = 150 Ω
I_F = 0.3 A, V_GS = 0
I_F = 0.3 A, V_GS = 0,
di_F/dt = 50 A/µs
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