2SJ76 Datasheet, PDF (4/6 Pages) Hitachi Semiconductor – Silicon P-Channel MOS FET

2SJ76, 2SJ77, 2SJ78, 2SJ79
Typical Transfer Characteristics
–100
V_DS = –20 V
–80
–60
–40
–20
0
–0.4 –0.8 –1.2 –1.6 –2.0
Gate to Source Voltage V_GS (V)
Forward Transfer Admittance
vs. Drain Current
200
100
50
20
10
T_C = 25°C
5
V_DS = –20 V
2
–2 –5 –10 –20 –50 –100 –200
Drain Current I_D (mA)
Forward Transfer Admittance
vs. Frequency
500
100
10
T_C = 25°C
V_DS = –20 V
I_D = –10 mA
1.0
0.1
0.05
5 k10 k
100 k 1 M 10 M 50 M
Frequency f (Hz)