2SJ76 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon P-Channel MOS FET

Power vs. Temperature Derating
60
40
20
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
–50
T_C = 25°C
–1.0
–0.9
–40
–0.8
–30
–0.7
–0.6
–20
–0.5
–0.4
–10
–0.3
–0.2
VGS = –0.1 V
0
–20 –40 –60 –80 –100
Drain to Source Voltage V_DS (V)
2SJ76, 2SJ77, 2SJ78, 2SJ79
Typical Output Characteristics
–500
T_C = 25°C
–4.5
–4.0
–400
–3.5
–300
–3.0
–200
–100
0
–2.5
–2.0
–1.5
–1.0
VGS = –0.5 V
–4 –8 –12 –16 –20
Drain to Source Voltage V_DS (V)
–500
Typical Transfer Characteristics
V_DS = –20 V
–400
–300
–200
–100
0
–1 –2 –3 –4 –5
Gate to Source Voltage V_GS (V)