2SJ76 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon P-Channel MOS FET

2SJ76, 2SJ77, 2SJ78, 2SJ79
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SJ76
2SJ77
2SJ78
2SJ79
Gate to source voltage
Drain current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. Value at T_C = 25°C
Symbol
V_DSX
V_GSS
I_D
I _DR
Pch
Pch*¹
Tch
Tstg
Ratings
Unit
–140
V
–160
–180
–200
±15
V
–500
mA
–500
mA
1.75
W
30
W
150
°C
–45 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Drain to source
2SJ76
breakdown voltage 2SJ77
V_(BR)DSX –140 —
–160 —
2SJ78
–180 —
2SJ79
–200 —
Gate to source breakdown
voltage
V_(BR)GSS ±15
—
Gate to source voltage
Drain to source saturation
voltage
V_GS(on)
–0.2
—
V_DS(sat)
—
—
Forward transfer admittance |y_fs|
20
35
Input capacitance
Ciss —
120
Reverse transfer capacitance Crss —
4.8
Note: 1. Pulse test
Max
—
—
—
—
—
–1.5
–2.0
—
—
—
Unit
V
V
V
V
V
V
V
mS
pF
pF
Test conditions
V_GS = 2 V, I_D = –1 mA
I_G = ±10 µA, V_DS = 0
I_D = –10 mA, V_DS = –10 V*¹
I_D = –10 mA, V_GD = 0 *¹
I_D = –10 mA, V_DS = –20 V*¹
V_DS = –10 V, I_D = –10 mA,
f = 1 MHz
2