2SD2263 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SD2263
1,000
DC Current Transfer Ratio vs.
Collector Current
300
100
30
V_CE = 2 V
10
1 3 10 30 100 300 1,000
Collector Current I_C (mA)
Typical Characteristics of
Emitter to Collector Diode
0.5
0.4
0.3
0.2
0.1
0
0.4 0.8 1.2 1.6 2.0
Emitter to Collector Forward Voltage
V_ECF (V)
Saturation Voltage vs. Collector Current
10
3
1
V_{BE (sat)}
0.3
0.1
0.03
0.01
1
V_{CE (sat)}
l_C = 10 l_B
3 10 30 100 300 1,000
Collector Current I_C (mA)
1,000
300
Gain Bandwidth Product vs.
Collector Current
V_CE = 2 V
100
30
10
1 3 10 30 100 300 1,000
Collector Current I_C (mA)
4