2SD2263 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

Maximum Collector Dissipation Curve
0.8
0.6
0.4
0.2
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
0.5
PW = 0.5 W
2.0
1.6
1.8
1.4
0.4
1.2
1.0
0.3
0.8
0.6
0.2
0.4
0.1
0.2 mA
I_B = 0, Ta = 25°C
0
2
4
6
8
10
Collector to Emitter Voltage V_CE (V)
2SD2263
Area of Safe Operation
3
i_{C (peak)}
1
0.3
0.1
0.03
0.01
I_{C (max)}
(T_C^D=C2O5p_{°Cer)ation}
Ta = 25°C, 1 Shot Pulse
0.003
0.1 0.3 1 3 10 30 100
Collector to Emitter Voltage V_CE (V)
Typical Transfer Characteristics
0.5
0.4
0.3
0.2
0.1
V_CE = 2 V
0
0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage V_BE (V)
3