2SD2263 Datasheet, PDF (2/7 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SD2263
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
E to C diode current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
i_C(peak)
I_D
P_C
Tj
Tstg
Ratings
Unit
25
V
25
V
6
V
0.5
A
1.0
A
0.5
A
0.5
W
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown V_(BR)CBO 25
—
voltage
Collector to emitter breakdown V_(BR)CEO 25
—
voltage
Collector to emitter sustaining V _{CEO (sus)} 26
—
voltage
Emitter to base breakdown
V_(BR)EBO
6
—
voltage
Collector cutoff current
I _CBO
—
—
I _CEO
—
—
Emitter cutoff current
I _EBO
—
—
DC current transfer ratio
h_FE1
100 —
h_FE2
50
—
Collector to emitter saturation V_CE(sat)
—
—
voltage
E to C diode forward voltage V_D
Note: 1. Pulse test
—
—
Max Unit
—
V
35
V
36
V
—
V
0.2 µA
0.5 µA
0.2 µA
500
—
0.5 V
1.2 V
Test conditions
I_C = 10 µA, I_E = 0
I_C = 1 mA, R_BE = ∞
I_C = 0.5 A, R_BE = ∞,
L = 20 mH
I_E = 10 µA, I_C = 0
V_CB = 20 V, I_E = 0
V_CE = 20 V, R_BE = ∞
V_EB = 5 V, I_C = 0
V_CE = 2 V, I_C = 50 mA*¹
V_CE = 2 V, I_C = 0.5 A*¹
I_C = 0.5 A*¹, I_B = 50 mA
I_E = 0.5 A*¹
2