2SD2046 Datasheet, PDF (4/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial, Darlington

2SD2046
300
100
30
10
3
1.0
0.3
1m
10 m
Saturation Voltage vs. Collector Current
10
3
V_BE (sat)
1.0
V_CE (sat)
0.3
200, 500
500
l_C/l_B = 200
Ta = 25°C
Pulse
0.1
0.1
0.3
1.0
3
10
Collector Current I_C (A)
Transient Thermal Resistance
Ta = 25°C
100 m
1
10
Time t (s)
100
1,000
4