2SD2046 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial, Darlington

2SD2046
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
E to C diode forward current
Symbol
V_CBO
V_EBO
I_C
ic _(peak)
P_C
Tj
Tstg
I_D
Ratings
Unit
50
V
7
V
1.5
A
3.0
A
1.0
W
150
°C
–55 to +150
°C
1.5
A
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown V_(BR)CBO 50
60
voltage (Zener breakdown
(V_z)
voltage)
Collector to emitter breakdown V_(BR)CEO 50
—
voltage
Emitter to base breakdown
V_(BR)EBO
7
—
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
I _CEO
h_FE
V_CE(sat)1
—
—
2000 —
—
—
V_CE(sat)2
—
—
Base to emitter saturation
V_BE(sat)1
—
—
voltage
V_BE(sat)2
—
—
E to C diode forward voltage V_D
—
—
Note: 1. Pulse test
Max Unit
70
V
—
V
—
V
10
µA
10000
1.5 V
2.0 V
2.0 V
2.5 V
3.0 V
Test conditions
I_C = 0.1 mA, I_E = ∞
I_C = 10 mA, R_BE = ∞
I_E = 50 mA, I_C = 0
V_CE = 40 V, R_BE = ∞
V_CE = 3 V, I_C = 1 A*¹
I_C = 1 A, I_B = 1 mA*¹
I_C = 1.5 A, I_B = 1.5 mA*¹
I_C = 1 A, I_B = 1 mA*¹
I_C = 1.5 A, I_B = 1.5 mA*¹
I_D = 1.5 A*¹
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