2SD2046 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial, Darlington

Maximum Collector Dissipation Curve
1.2
0.8
0.4
0
50
100
150
Ambient Temperature Ta (°C)
Typical Output Characteristics
2.0
Ta = 25°C ₂₀₀
180
1.6
160
140
1.2
120
0.8
0.4
100 ^µA
I_B
=0
0
1
2
3
4
5
Collector to Emitter Voltage V_CE (V)
2SD2046
Area of Safe Operation
10
i_{C (peak)}
3
1.0
1 µs
100 µs
0.3
0.1
Ta = 25°C
0.03
1 Shot Pulse
0.01
3
10
30
100
300
Collector to Emitter Voltage V_CE (V)
30,000
DC Current Transfer Ratio vs.
Collector Current
10,000
3,000
Ta
=
75^°_2C5
–25
1,000
V_CE = 3 V
Pulse
300
0.1
0.3
1.0
3
10
Collector Current I_C (A)
3