2SD1974 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SD1974
Typical Transfer Characteristics
1.0
0.8
0.6
0.4
0.2
V_CE = 2 V
Ta = 25°C
Pulse
0
0.4 0.8 1.2 1.6 2.0
Base to Emitter Voltage V_BE (V)
10,000
3,000
1,000
300
DC Current Transfer Ratio vs.
Collector Current
V_CE = 2 V
Pulse
25
Ta = 75°C
–25
100
30
10
0.001 0.003 0.01 0.03 0.1 0.3 1.0
Collector Current I_C (A)
Saturation Voltage vs.
Collector Current
10
I_C = 10 I_B
3
Ta = 25°C
Pulse
1.0
V_BE(sat)
0.3
0.1
0.03
V CE(sat)
0.01
0.001 0.003 0.01 0.03 0.1 0.3 1.0
Collector Current I_C (A)
Typical Characteristics of
Emitter to Collector Diode
1.0
0.8
0.6
0.4
0.2
Ta = 25°C
Pulse
0
0.4 0.8 1.2 1.6 2.0
Emitter to Collector Forward Voltage V_D (V)
4