2SD1974 Datasheet, PDF (2/7 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SD1974
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
E to C diode forward current
Collector power dissipation
Junction temperature
V_CBO
V_CEO
V_EBO
I_C
ic _(peak)
I_D
P_C * ¹
Tj
25
25
6
0.8
1.5
0.6
1.0
150
Storage temperature
Tstg
–55 to +150
Note: 1. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Unit
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown V_(BR)CBO 25
—
voltage
Collector to emitter breakdown V_(BR)CEO 25
—
voltage
Collector to emitter sustaining V_CEO(sus) 25
—
voltage
Emitter to base breakdown
V_(BR)EBO
6
—
voltage
Collector cutoff current
I _CBO
—
—
I _CEO
—
—
Emitter cutoff current
I _EBO
—
—
DC current transfer ratio
h_FE
250 —
Collector to emitter saturation V_CE(sat)
—
—
voltage
E to C diode forward voltage V_D
Notes: 1. Pulse test
2. Marking is “ES”.
—
—
Max Unit
—
V
35
V
35
V
—
V
0.2 µA
0.5 µA
0.2 µA
1200
0.4 V
1.5 V
Test conditions
I_C = 10 µA, I_E = 0
I_C = 1 mA, R_BE = ∞
I_C = 0.8 A, R_BE = ∞,
L = 20 mH
I_E = 10 µA, I_C = 0
V_CB = 20 V, I_E = 0
V_CE = 20 V, R_BE = ∞
V_EB = 5 V, I_C = 0
V_CE = 2 V, I_C = 0.1 A*¹
I_C = 0.8 A, I_B = 80 mA*¹
I_D = 0.6 A*¹
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