2SD1974 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

Maximum Collector Dissipation Curve
1.2
0.8
0.4
0
50
100
150
Ambient Temperature Ta (°C)
Area of Safe Operation of
Emitter to Collector Diode
10
Ta = 25°C
1 Shot Pulse
8
6
4
2
0
0.1
0.3
1.0
3
10
Pulse Width P_W (ms)
2SD1974
Area of Safe Operation
10
3
i_C(peak)
1.0
I_C(max)
0.3
0.1
DC
Operation
0.03 _{Ta = 25°C}
1 Shot Pulse
0.01
0.01 0.3 1.0 3
10 30 100
Collector to Emitter Voltage V_CE (V)
Typical Output Characteristics
1.0
1.8
0.8
1.6
1.4
1.2
0.6
1.0
0.8
0.4
0.6
0.4
0.2
0.2 mA
I_B = 0 _{Ta = 25°C}
0
2
4
6
8
10
Collector to Emitter Voltage V_CE (V)
3