2SC4367 Datasheet, PDF (4/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SC4367
Collector to Emitter Saturation Voltage vs.
Collector Current
10
I_C = 10 I_B
Pulse
Ta = –25°C
1.0
25
75
0.1
Gain Bandwidth Product vs. Collector
Current
10,000
1,000
V_CE = 10 V
Pulse
0.01
1
2
5 10 20 50 100
Collector Current I_C (mA)
100
1
2 5 10 20 50 100
Collector Current I_C (mA)
Collector Output Capacitance vs.
Collector to Base Voltage
10
f = 1 MHz
5
I_E = 0
2
1.0
0.5
0.2
0.1
12
5 10 20 50 100
Collector to Base Voltage V_CB (V)
4