2SC4367 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SC4367
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
i_{C (peak)}
P_C
Tj
Tstg
Ratings
Unit
30
V
20
V
3
V
100
mA
200
mA
600
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown
voltage
V_(BR)CBO
30
Collector to emitter breakdown V_(BR)CEO 20
voltage
Emitter to base breakdown
voltage
V_(BR)EBO
3
Collector cutoff current
I _CBO
—
DC current transfer ratio
h_FE
40
Collector to emitter saturation V_CE(sat) —
voltage
Gain bandwidth product
f_T
600
Collector output capacitance Cob
—
Typ Max Unit
—
—
V
—
—
V
—
—
V
—
1.0 µA
—
—
—
1.0 V
1000 —
1.3 —
MHz
pF
Test conditions
I_C = 10 µA, I_E = 0
I_C = 3 mA, R_BE = ∞
I_E = 10 µA, I_C = 0
V_CB = 10 V, I_E = 0
V_CE = 10 V, I_C = 10 mA
I_C = 20 mA, I_B = 4 mA
V_CE = 10 V, I_C = 10 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
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