2SC4367 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

Maximum Collector Dissipation Curve
600
400
200
0
50
100
150
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
100
V_CE = 10 V
50
Pulse
20
10
5
2
1
0 0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage V_BE (V)
2SC4367
Typical Output Characteristics
30
24
140
120
18
100
80
12
60
40
6
I_B = ^{20 µA}
0
4
8
12 16 10
Collector to Emitter Voltage V_CE (V)
1,000
500
200
100
50
DC Current Transfer Ratio vs.
Collector Current
Ta = 75°C
25
–25
V_CE = 10 V
Pulse
20
10
12
5 10 20 50 100
Collector Current I_C (mA)
3