2SC4366 Datasheet, PDF (4/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SC4366
Gain Bandwidth Product vs. Collector
Current
1,000
300
100
30
V_CE = 6 V
Ta = 25°C
Pulse
10
1 3 10 30 100 300 1,000
Collector Current I_C (mA)
Collector Output Capacitance vs.
Collector to Base Voltage
100
f = 1 MHz
I_E = 0
30
Ta = 25°C
10
3
1
0.1 0.3 1.0 3
10 30 100
Collector to Base Voltage V_CB (V)
4