2SC4366 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

Maximum Collector Dissipation Curve
150
100
50
0
50
100
150
Ambient Temperature Ta (°C)
DC Current Transfer Ratio vs. Collector
Current
10,000
3,000
Ta = 75°C
V_CE = 6 V
Pulse
1,000
25
–25
300
100
1
3 10 30 100 300 1,000
Collector Current I_C (mA)
2SC4366
Typical Output Characteristics
50
40
35
40
30
30
25
20
20
15
10
10
5 µA
I_B = 0
Ta = 25°C
0
2
4
6
8
10
Collector to Emitter Voltage V_CE (V)
Saturation Voltage vs. Collector
Current
1.0
V_BE(sat)
0.3
0.1
V_CE(sat)
0.03
0.01
1
I_C = 10 I_B
Ta = 25°C
Pulse
3 10 30 100 300 1,000
Collector Current I_C (mA)
3