2SC4366 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SC4366
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
Tj
Tstg
Ratings
Unit
60
V
50
V
15
V
300
mA
150
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V_(BR)CBO
60
—
—
V
voltage
I_C = 10 µA, I_E = 0
Collector to emitter breakdown V_(BR)CEO 50
—
—
V
voltage
I_C = 1 mA, R_BE = ∞
Emitter to base breakdown
V_(BR)EBO
15
—
—
V
voltage
I_E = 10 µA, I_C = 0
Collector cutoff current
Base to emitter voltage
DC current transfer ratio
I _CBO
—
—
1
µA
V_CB = 50 V, I_E = 0
V_BE
—
—
0.75 V
V_CE = 6 V, I_C = 1 mA
h_FE1
800 —
2000
V_CE = 6 V, I_C = 100 mA
(pulse)
h_FE2
500 —
Collector to emitter saturation V_CE(sat) —
—
voltage
—
0.3 V
V_CE = 6 V, I_C = 1 mA
I_C = 300 mA, I_B = 30 mA
(pulse)
Note: Marking is “ZI–”.
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