2SC3957 Datasheet, PDF (4/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial, Darlington

2SC3957
Collector to Emitter Saturation Voltage vs.
Base Current
2.4
Ta = 25°C
2.0
Pulse
1.6
1.2 _{20 50 100 200 IC = 500 mA}
0.8
0.4
0
1 3 10 30 100 300 1,000
Base Current I_B (µA)
Base to Emitter Saturation Voltage vs.
Collector Current
2.0
I_C = 1,000 I_B
1.8
Pulse
1.6
Ta ^{= –50}
–25
1.4
0
25
1.2
50
75
1.0
100
0.8
0.6
0.4
1
2 5 10 20 50 100 200 500
Collector Current I_C (mA)
4