2SC3957 Datasheet, PDF(2/6 Page) Hitachi Semiconductor – Silicon NPN Epitaxial, Darlington

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2SC3957 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial, Darlington

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2SC3957

Absolute Maximum Ratings (Ta = 25Â°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC (peak)

Tstg

Ratings

Unit

300

500

150

Â°C

â55 to +150

Â°C

Electrical Characteristics (Ta = 25Â°C)

Item

Symbol Min Typ

Collector to emitter breakdown V(BR)CEO 30

voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector to emitter saturation

voltage

I CBO

I EBO

hFE1*1

hFE2*1

hFE3*1

VCE(sat)

2000 â

3000 â

Base to emitter saturation

voltage

VBE(sat)

Notes: 1. The 2SC3957 is grouped by hFE as follows.

2. Pulse test

Mark

GIA

GIB

hFE1

2000 to 100000 5000 to 100000

hFE2

3000 min

10000 min

hFE3

3000 min

10000 min

Max Unit

100 nA

100000

1.5 V

2.0 V

Test conditions

IC = 1 mA, RBE = â

VCB = 30 V, IE = 0

VEB = 10 V, IC = 0

IC = 10 mA, VCE = 5 V*2

IC = 100 mA, VCE = 5 V*2

IC = 400 mA, VCE = 5 V*2

IC = 100 mA, IB = 0.1 mA*2

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