2SC3957 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial, Darlington

Maximum Collector Dissipation Curve
150
100
50
0
50
100
150
Ambient Temperature Ta (°C)
DC Current Transfer Ratio vs.
Collector Current
80
V_CE = 5 V
70 Pulse
60
50
40
30
25
0
20
–25
10
–50
0
2.0 5.0 10 20 50 100 200 500
Collector Current I_C (mA)
2SC3957
Typical Output Characteristics
250
6
200
150
4
100
2 µA
50
P_C = 150 mW
I_B = 0
0
2
4
6
8
10
Collector to Emitter Voltage V_CE (V)
Collector to Emitter Saturation Voltage vs.
Collector Current
1.1
1.0 ^{IC = 1,000 IB}
0.9
Ta = ^{–50°C}
–25
0.8
0
25
0.7
50
75
0.6
100
0.5
0.4
Pulse
0.3
1
2 5 10 20 50 100 200 500
Collector Current I_C (mA)
3