3SK322 Datasheet, PDF (3/12 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSX 12
Gate 1 to source breakdown
voltage
Gate 2 to source breakdown
voltage
Gate 1 cutoff current
Gate 2 cutoff current
Drain current
V_(BR)G1SS ±8
V_{(BR) G2SS} ±8
I _G1SS
—
I _G2SS
—
I _DS(on)
0.5
Gate 1 to source cutoff voltage
V_G1S(off)
0
Gate 2 to source cutoff voltage
V_G2S(off)
0
Forward transfer admittance
|y_fs|
16
Input capacitance
Ciss
2.4
Output capacitance
Reverse transfer capacitance
Power gain
Coss 0.8
Crss
—
PG
22
Noise figure
Power gain
NF
—
PG
12
Noise figure
Noise figure
NF
—
NF
—
Note: Marking is “ZW–”
3SK322
Typ Max Unit Test conditions
—
—
V
—
—
V
I_D = 200 µA , V_G1S = –3 V,
V_G2S = –3 V
I_G1 = ±10 µA, V_G2S = V_DS = 0
—
—
V
I_G2 = ±10 µA, V_G1S = V_DS = 0
—
±100 nA
—
±100 nA
—
10
mA
—
+1.0 V
—
+1.0 V
20
—
mS
2.9 3.4 pF
1.0 1.4 pF
0.023 0.04 pF
25
—
dB
1.0 1.8 dB
15
—
dB
3.2 4.5 dB
2.8 3.5 dB
V_G1S = ±6 V, V_G2S = V_DS = 0
V_G2S = ±6 V, V_G1S = V_DS = 0
V_DS = 6 V, V_G1S = 0.75V,
V_G2S = 3 V
V_DS = 10 V, V_G2S = 3V,
I_D = 100 µA
V_DS = 10 V, V_G1S = 3V,
I_D = 100 µA
V_DS = 6 V, V_G2S = 3V,
I_D = 10 mA, f = 1 kHz
V_DS = 6 V, V_G2S = 3V,
I_D = 10 mA, f = 1 MHz
V_DS = 6 V, V_G2S = 3V,
I_D = 10 mA, f = 200 MHz
V_DS = 6 V, V_G2S = 3V,
I_D = 10 mA, f = 900 MHz
V_DS = 6 V, V_G2S = 3V,
I_D = 10 mA, f = 60 MHz
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