3SK322 Datasheet, PDF (1/12 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK322
Silicon N-Channel Dual Gate MOS FET
Application
UHF / VHF RF amplifier
Features
• Low noise figure.
NF = 1.0 dB typ. at f = 200 MHz
• Capable of low voltage operation
• Provide mini mold packages; MPAK-4R(SOT-143 var.)
Outline
ADE-208-712A (Z)
2nd. Edition
Dec. 1998