3SK322 Datasheet, PDF (2/12 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK322
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
Channel power dissipation
V_DS
V_G1S
V_G2S
I_D
Pch
12
V
±8
V
±8
V
25
mA
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
2