3SK300 Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier

3SK300
Electrical Characteristics (Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate 1 to source breakdown
voltage
Gate 2 to source breakdown
voltage
Gate 1 cutoff current
Symbol Min
V_(BR)DSX
14
V_(BR)G1SS ±8
V_(BR)G2SS ±8
I _G1SS
—
Gate 2 cutoff current
I _G2SS
—
Drain current
I _DS(op)
4
Gate 1 to source cutoff voltage V_G1S(off) 0
Gate 2 to source cutoff voltage V_G2S(off) 0
Forward transfer admittance |y_fs|
20
Input capacitance
Ciss
2.4
Output capacitance
Coss 0.8
Reverse transfer capacitance Crss
—
Power gain
PG
24
Noise figure
NF
—
Power gain
PG
12
Noise figure
NF
—
Noise figure
NF
—
Note: Marking is “ZR–”
Typ Max Unit
—
—
V
—
—
V
—
—
V
—
±100 nA
—
±100 nA
8
14
mA
+0.2 +1.0 V
+0.3 +1.0 V
25
—
ms
3.1
3.5
pF
1.1
1.4
pF
0.021 0.04 pF
27.6 —
dB
1.0
1.5
dB
15.6 —
dB
3.0
4.0
dB
2.7
3.5
dB
Test conditions
I_D = 200 µA, V_G1S = –3 V,
V_G2S = –3 V
I_G1 = ±10 µA,
V_DS = V_G2S = 0
I_G2 = ±10 µA,
V_DS = V_G1S = 0
V_G1S = ±6 V,
V_DS = V_G2S = 0
V_G2S = ±6 V,
V_DS = V_G1S = 0
V_DS = 6 V, V_G1S = 0.75 V,
V_G2S = 3 V
V_DS = 10 V, V_G2S = 3 V,
I_D = 100 µA
V_DS = 10 V, V_G1S = 3 V,
I_D = 100 µA
V_DS = 6 V, V_G2S = 3 V,
I_D = 10 mA, f = 1 kHz
V_DS = 6 V,
V_G2S = 3 V, I_D = 10 mA
f = 1 MHz
V_DS = 6 V, V_G2S = 3 V,
I_D = 10 mA, f = 200 MHz
V_DS = 6 V, V_G2S = 3 V,
I_D = 10 mA, f = 900 MHz
V_DS = 6 V, V_G2S = 3 V,
I_D = 10 mA, f = 60 MHz
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