3SK300 Datasheet, PDF (2/9 Pages) Hitachi Semiconductor – Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier

3SK300
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V_DS
V_G1S
V_G2S
I_D
Pch
Tch
Tstg
Ratings
Unit
14
V
±8
V
±8
V
25
mA
150
mW
150
°C
–55 to +150
°C
2