3SK300 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier

3SK300
Silicon N Channel Dual Gate MOS FET
UHF / VHF RF Amplifier
Features
• Low noise figure
NF = 1.0 dB typ. at f = 200 MHz
• High gain
PG = 27.6 dB typ. at f = 200 MHz
Outline
MPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
ADE-208-449
1st. Edition