2SK1862 Datasheet, PDF(3/6 Page) Hitachi Semiconductor

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2SK1862 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

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2SK1862, 2SK1863

Electrical Characteristics (Ta = 25Â°C)

Item

Symbol Min Typ

Drain to source 2SK1862

V(BR)DSS

450

breakdown

2SK1863

500

voltage

Gate to source breakdown

voltage

V(BR)GSS

Â±30

Gate to source leak current IGSS

Zero gate

2SK1862 IDSS

voltage drain

current

2SK1863

Gate to source cutoff voltage VGS(off)

2.0

Static drain to 2SK1862 RDS(on)

2.0

source on state 2SK1863

resistance

2.2

Forward transfer admittance |yfs|

1.5 2.5

Input capacitance

Ciss

330

Output capacitance

Coss â

Reverse transfer capacitance Crss

Turn-on delay time

t d(on)

Rise time

Turn-off delay time

t d(off)

Fall time

Body to drain diode forward VDF

voltage

0.9

Body to drain diode reverse trr

recovery time

300

Note 1. Pulse Test

Max Unit

Â±10 ÂµA

250 ÂµA

3.0 V

2.8 â¦

3.0

Test conditions

ID = 10 mA, VGS = 0

IG = Â±100 ÂµA, VDS = 0

VGS = Â±25 V, VDS = 0

VDS = 360 V, VGS = 0

VDS = 400 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 2 A, VGS = 10 V*1

ID = 2 A

VDS = 10 V*1

VDS = 10 V

VGS = 0

f = 1 MHz

ID = 2 A

VGS = 10 V

RL = 15 â¦

IF = 3 A, VGS = 0

IF = 3 A, VGS = 0,

diF / dt = 100 A / Âµs

See characteristic curves of 2SK1153, 2SK1154

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