2SK1862 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1862, 2SK1863
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1862
2SK1863
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
Symbol
V_DSS
V_DSS
V_GSS
I_D
I *¹
D(pulse)
I _DR
Pch*²
Tch
Tstg
Ratings
Unit
450
V
500
±30
V
3
A
12
A
3
A
25
W
150
°C
–55 to +150
°C
2