HD3401 Datasheet, PDF (3/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – Plastic-Encapsulate MOSFET

Typical Characteristics
-25
T =25℃
a
Pulsed
-20
Output Characteristics
V =-10V
GS
V =-4.5V
GS
-15
-10
-5
-0
-0
V =-3.0V
GS
V =-2.5V
GS
V =-2.0V
GS
-1
-2
-3
-4
-5
DDAIN TO SOURCE VOLTAGE V (V)
DS
-5
T =25℃
a
Pulsed
-4
Transfer Characteristics
-3
-2
-1
-0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
GATE TO SOURCE VOLTAGE V (V)
GS
180
T =25℃
a
Pulsed
150
R
DS(ON)
——
I
D
120
V =-2.5V
GS
90
V =-4.5V
GS
60
V =-10V
GS
30
0
-0
-2
-4
-6
-8
DRAIN CURRENT I (A)
D
-10
T =25℃
a
Pulsed
-1
I
S
—— V
SD
-0.1
-0.01
-1E-3
-1E-4
-1E-5
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
SOURCE TO DRAIN VOLTAGE V (V)
SD
180
150
120
90
60
30
0
-0
R
—— V
DS(ON)
GS
T =25℃
a
Pulsed
I =-2A
D
-2
-4
-6
-8
-10
GATE TO SOURCE VOLTAGE V (V)
GS
High Diode Semiconductor
3