HD3401 Datasheet, PDF (1/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – Plastic-Encapsulate MOSFET

HD3401
SOT-23 Plastic-Encapsulate MOSFET
P -Channel MOSFET
Product Summary
V_(BR)DSS
-30 V
R_DS(on)MAX
65mΩ@^-10V
75mΩ@-4.5V
90mΩ@^-2.5V
I_D
-4.2A
SOT- 23
D
Features
● _{P-Channel Enhancement Mode Field Effect Transistor}
● High dense cell design for extremely low R_DS(ON).
● Exceptional on-resistance and maximum DC current capability
Applications
● Load/Power Switching
● Interfacing Switching
Marking:
● _R1
S
G
D
G
S
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient (t<5s)
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
P_D
R_θJA
T_J
T_STG
Value
-30
±12
-4.2
350
357
150
-55~+150
Unit
V
V
A
mW
℃/W
℃
℃
High Diode Semiconductor
1