HD3401 Datasheet, PDF (2/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – Plastic-Encapsulate MOSFET

Electrical Characteristics (T_A=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Off characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-source leakage current
V(BR)DSS
IDSS
IGSS
VGS = 0V, ID =-250µA
VDS =-24V,VGS = 0V
VGS =±12V, VDS = 0V
On characteristics
Drain-source on-resistance
(note 1)
RDS(on)
Forward tranconductance (note 1)
gFS
Gate threshold voltage
VGS(th)
Dynamic characteristics (note 2)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Switching characteristics (note 2)
Turn-on delay time
td(on)
Turn-on rise time
tr
Turn-off delay time
td(off)
Turn-off fall Time
tf
VGS =-10V, ID =-4.2A
VGS =-4.5V, ID =-4A
VGS =-2.5V,ID=-1A
VDS =-5V, ID =-5A
VDS =V_GS, ID =-250µA
VDS =-15V,VGS =0V,f =1MHz
V_GS=-10V,V_DS=-15V,
R_L=3.6Ω,R_GEN=6Ω
Drain-source diode characteristics and maximum ratings
Diode forward voltage (note 1)
V_SD
I_S=-1A,V_GS=0V
Note :
1. Pulse Test : Pulse width≤300µs, duty cycle≤2%.
2. These parameters have no way to verify.
Min Typ Max Unit
-30
V
-1
µA
±100 nA
65
mΩ
75
mΩ
90
mΩ
7
S
-0.7
-1.3
V
954
pF
115
pF
77
pF
6.3
ns
3.2
ns
38.2 ns
12
ns
-1
V
High Diode Semiconductor
2