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| HD3400 Datasheet, PDF (3/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – Plastic-Encapsulate MOSFET | |||
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Typical Characteristics
25
Pulsed
20
15
Output Characteristics
VGS=10.0Vã4.5Vã3.0V
VGS=2.5V
10
VGS=2.0V
5
0
0
1
2
3
4
5
DRAIN TO SOURCE VOLTAGE VDS (V)
R
DS(ON)
ââ
I
D
60
Ta=25â
55
Pulsed
50
45
VGS=2.5V
40
35
VGS=4.5V
30
25
VGS=10V
20
1
4
8
12
16
20
DRAIN CURRENT ID (A)
10
Ta=25â
Pulsed
1
I
S
ââ
V
SD
0.1
0.01
1E-3
1E-4
0
200
400
600
800
1000
SOURCE TO DRAIN VOLTAGE VSD (mV)
1200
5
VDS=5.0V
Pulsed
4
Transfer Characteristics
3
2
Ta=100â
1
Ta=25â
0
0.0
0.5
1.0
1.5
2.0
2.5
GATE TO SOURCE VOLTAGE VGS (V)
400
350
300
250
200
150
100
50
0
0
R
DS(ON)
ââ
V
GS
Ta=25â
Pulsed
ID=5A
2
4
6
8
10
GATE TO SOURCE VOLTAGE VGS (V)
1.0
0.9
0.8
0.7
0.6
0.5
25
Threshold Voltage
ID=250uA
50
75
100
125
JUNCTION TEMPERATURE TJ (â)
High Diode Semiconductor
3
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