HD3400 Datasheet, PDF (2/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – Plastic-Encapsulate MOSFET

Electrical Characteristics (T_A=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Off Characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-source leakage current
V(BR) DSS
IDSS
IGSS
VGS = 0V, ID =250µA
VDS =24V,VGS = 0V
VGS =±12V, VDS = 0V
On characteristics
Drain-source on-resistance
(note 3)
RDS(on)
Forward tranconductance
gFS
Gate threshold voltage
VGS(th)
Dynamic Characteristics (note 4,5)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Gate resistance
Rg
VGS =10V, ID =5.8A
VGS =4.5V, ID =5A
VGS =2.5V,ID=4A
VDS =5V, ID =5A
VDS =V_GS, ID =250µA
VDS =15V,VGS =0V,f =1MHz
VDS =0V,VGS =0V,f =1MHz
Switching Characteristics (note 4,5)
Turn-on delay time
td(on)
Turn-on rise time
tr
Turn-off delay time
td(off)
Turn-off fall time
tf
V_GS=10V,V_DS=15V,
R_L=2.7Ω,R_GEN=3Ω
Drain-source diode characteristics and maximum ratings
Diode forward voltage (note 3)
V_SD
I_S=1A,V_GS=0V
Note :
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t < 5 sec.
3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
30
V
1
µA
±100 nA
35
mΩ
40
mΩ
52
mΩ
8
S
0.7
1.4
V
1050 pF
99
pF
77
pF
3.6
Ω
5
ns
7
ns
40
ns
6
ns
1
V
High Diode Semiconductor
2