HD3400 Datasheet, PDF (1/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – Plastic-Encapsulate MOSFET

HD3400
SOT-23 Plastic-Encapsulate MOSFET
N -Channel MOSFET
Product Summary
V_(BR)DSS
30 V
R_DS(on)MAX
35mΩ@ ^10V
40mΩ@4.5V
52mΩ@2.5V
I_D
5.8A
SOT- 23
D
Features
z High dense cell design for extremely low R_DS(ON)
● Exceptional on-resistance and maximum DC current capability
S
G
Applications
● Load/Power Switching
● Interfacing Switching
Marking:
● _R0
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Drain Current-Pulsed (note 1)
Power Dissipation
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_DM
P_D
R_θJA
T_J
T_STG
Value
30
±12
5.8
30
350
357
150
-55~+150
Unit
V
V
A
A
mW
℃/W
℃
℃
High Diode Semiconductor
1