HD2321 Datasheet, PDF (3/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – Plastic-Encapsu l ate MOSFET

Typical Characteristics
-16
T =25℃
a
Pulsed
-12
Output Characteristics
V =-4.5V,-4.0V,-3.5V,-3.0V,-2.5V
GS
V =-2.0V
GS
-8
V =-1.5V
GS
-4
V =-1.0V
GS
-0
-0
-1
-2
-3
-4
DRAIN TO SOURCE VOLTAGE V (V)
DS
300
T =25℃
a
Pulsed
250
R_DS(ON) —— I_D
200
150
100
50
0
-0
V =-1.8V
GS
V =-2.5V
GS
V =-4.5V
GS
-2
-4
-6
-8
-10
-12
DRAIN CURRENT I (A)
D
-20
I_S —— V_SD
T =25℃
a
-10
Pulsed
-3
-1
-0.3
-0.1
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
SOURCE TO DRAIN VOLTAGE V (V)
SD
-10
T =25℃
a
Pulsed
-8
Transfer Characteristics
-6
-4
-2
-0
-0.0
-0.5
-1.0
-1.5
-2.0
-2.5
GATE TO SOURCE VOLTAGE V (V)
GS
500
R_DS(ON) —— V_GS
T =25℃
a
Pulsed
400
300
200
I =-3.3A
D
100
0
-0
-2
-4
-6
-8
GATE TO SOURCE VOLTAGE V (V)
GS
High Diode Semiconductor
3