HD2321 Datasheet, PDF (2/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – Plastic-Encapsu l ate MOSFET

Electrical Characteristics (T_A=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Static
Drain-source breakdown voltage
V(BR) DSS VGS = 0V, ID =-10µA
-20
V
Gate-source leakage
I_GSS
VDS =0V, VGS =±12V
±100 nA
Zero Gate voltage drain current
I_DSS
VDS =-16V, VGS =0V
-1.0
µA
Gate-source threshold voltage
VGS(th)
VDS =V_GS, ID =-250µA
-0.4
-0.9
V
VGS =-4.5V, ID =-3.3A
0.057
Drain-source on-state resistance
RDS(on) VGS =-2.5V, ID =-2.8A
0.076
Ω
VGS =-1.8V, ID =-2.3A
0.110
Forward tranconductance
gfS
VDS =-5V, ID =-3.3A
3
S
Forward diode voltage
V_SD
VGS =0V,I_S=-1.6A
-1.2
V
Dynamic
Input capacitance^a,b
Output capacitance^a,b
Reverse transfer capacitance^a,b
Total Gate charge^a
Gate-Source charge^a
Gate-Drain charge^a
Switching^a,b
Turn-on delay Time
Rise time
Turn-off delay time
Fall time
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
VDS =-6V,VGS =0V,f =1MHz
VDS =-6V,VGS =-4.5V,ID=-3.3A
td(on)
tr
td(off)
tf
V_GEN=-4.5V,V_DD=-6V,
ID =-1.0A,R_G=6Ω, R_L=6Ω
715
170
pF
120
13
nc
1.2
nc
2.2
nc
25
55
ns
90
60
Notes :
a. Pulse Test : pulse width ≤300µs, duty cycle ≤2%.
E. These parameters have no way to verify.
High Diode Semiconductor
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