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HD2321 Datasheet, PDF (1/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – Plastic-Encapsu l ate MOSFET | |||
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HD2321
SOT-23 Plastic-Encapsulate MOSFET
P -Channel MOSFET
Product Summary
V(BR)DSS
-20 V
RDS(on)MAX
57mΩ@-4.5V
76mΩ@-2.5V
110mΩ@-1.8V
ID
-2.9A
SOT- 23
D
Features
â TrenchFET Power MOSFET
S
G
Applications
â PA Switch
â Load Switch
Marking
â S21
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM
IS
PD
RθJA
TJ
Tstg
Value
-20
±12
-2.9
-12
-0.59
0.35
357
150
-50 ~+150
Unit
V
A
W
â/W
â
High Diode Semiconductor
1
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